The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 1979
Filed:
Aug. 01, 1978
Vadim N Maslov, Moscow, SU;
Oleg E Korobov, Moscow, SU;
Alla N Lupacheva, Moscow, SU;
Alexandr N Vlasov, Moscow, SU;
Viktor V Myasoedov, Podolsk Moskovskoi oblasti, SU;
Ellin P Bochkarev, Moscow, SU;
Felix A Gimelfarb, Moscow, SU;
Izidor K Bronshtein, Moscow, SU;
Natalya I Lukicheva, Moscow, SU;
Evgeny V Sinitsyn, Moscow, SU;
Jury V Sokurenko, Moscow, SU;
Elena S Jurova, Moscow, SU;
Elena M Kistova, Moscow, SU;
Marina A Konstantinova, Moscow, SU;
Veniamin M Samaginov, Moscow, SU;
Abstract
A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. As all the strips have been brought under the substrate, the source is stopped for a period of time required for the formation of the main layer of a required thickness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile