Baldham, Germany

Jurgen Krausse


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1982

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2 patents (USPTO):Explore Patents

Title: Jurgen Krausse: Innovator in Semiconductor Technology

Introduction

Jurgen Krausse is a notable inventor based in Baldham, Germany. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to enhancing semiconductor devices.

Latest Patents

Krausse's latest patents include a method for preparing a protective amorphous silicon passivating film on semiconductor materials. This process involves depositing a protective passivating film of doped or undoped amorphous silicon on a semiconductor body using a silicon-hydrogen gaseous compound, which is decomposed by a glow discharge. The result is a high-quality amorphous silicon layer that enhances the performance of semiconductor devices. Another patent focuses on passivating semiconductor members by vapor depositing a layer of silicon and tempering it. This tempering process significantly reduces the blocking current in both the blocking and trigger directions of the semiconductor device.

Career Highlights

Krausse is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Krausse has collaborated with esteemed colleagues such as Friedrich Dannhauser and Karl Kempter. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies in semiconductor applications.

Conclusion

Jurgen Krausse's contributions to semiconductor technology through his patents and work at Siemens highlight his role as a key innovator in the field. His advancements continue to influence the development of more efficient semiconductor devices.

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