Siemens Aktiengesellschaft

Jurgen Krausse

Karl Kempter

Manfred Schnoller

Friedrich Dannhauser

Wilhelm Ladenhauf

In the present invention a process is provided for depositing a protective passivating film of doped or undoped amorphous silicon on a body of semiconductor material. In the process a body of semiconductor material is disposed within a reaction vessel, a silicon-hydrogen gaseous compound is fed into the reaction vessel and decomposed by means of a glow discharge. The decomposition of the silicon-hydrogen gas mixture results in the deposition of amorphous silicon on the semiconductor body.

Method for preparing a protective amorphous silicon passivating film on

Passivating a semiconductor device by vapor depositing a layer of silicon and thereafter tempering the deposited layer of silicon. As a result of the tempering, a drastic reduction in the blocking current in the blocking direction and the blocking current in the trigger direction of the semiconductor device are achieved.

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Baldham, Germany

Jurgen Krausse