Gruenwald, Germany

Jurgen Graul


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 44(Granted Patents)


Company Filing History:


Years Active: 1977

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1 patent (USPTO):Explore Patents

Title: Jurgen Graul: Innovator in Semiconductor Technology

Introduction

Jurgen Graul is a notable inventor based in Gruenwald, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of doping semiconductor materials.

Latest Patents

Graul holds a patent for a method of producing a doped zone of one conductivity type in a semiconductor body. This process involves coating selected areas of a semiconductor body with a polycrystalline or amorphous semiconductor layer. A dopant is then ion-implanted into this layer, and the structure is subjected to diffusion conditions. This technique allows for very slight disturbances in the crystal lattice of the semiconductor body, providing an adjustable dopant concentration at select surface zones.

Career Highlights

Jurgen Graul is associated with Siemens Aktiengesellschaft, a leading company in the technology sector. His work has contributed to advancements in semiconductor manufacturing processes, enhancing the efficiency and performance of electronic devices.

Collaborations

Graul has collaborated with Helmuth Murrmann, working together to push the boundaries of semiconductor technology and innovation.

Conclusion

Jurgen Graul's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of electronic components and systems.

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