Juraj Jarina

Title: Juraj Jarina: Semiconductor Manufacturing Innovation.

Introduction

Juraj Jarina is an inventor associated with Rajec, Slovakia. His patent work concerns methods for manufacturing semiconductor devices and improving the properties of CZ silicon substrates.

Latest Patents

Jarina is credited with 1 patent, titled “Methods of Manufacturing Semiconductor Devices and Semiconductor Devices.” The disclosed method uses two annealing steps: first, an unpolished CZ silicon substrate is annealed in an inert environment; then it is annealed in a wet oxidation environment. The first step dissolves inner-wall oxide in voids within the substrate, while the second helps fill those voids with semiconductor interstitials.

In some examples, the CZ silicon substrate comes from an ingot grown in a magnetic field using continuous counter-doping. The method is intended to reduce crystal-originated particle defects and oxygen concentration, while also reducing radial resistivity variation.

Career Highlights

Jarina’s listed patent connects his work with semiconductor manufacturing and substrate processing. The patent identifies Semiconductor Components Industries, LLC, as the company associated with the invention.

Collaborations

The provided information lists David Lysacek and Jan Hybl as Jarina’s coworkers. Their names are associated with his professional context, though specific roles in the patent are not stated.

Conclusion

Juraj Jarina’s patent describes a two-stage annealing approach aimed at improving CZ silicon substrates for semiconductor devices. It highlights his contribution to manufacturing methods focused on reducing defects and improving substrate consistency.