Tsukuba, Japan

Junzo Tanaka

This inventor holds 1 USPTO granted patent. Top assignee: National Institute for Research in Inorganic Materials. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junzo Tanaka. Retrieved from https://idiyas.com/inventor/junzo-tanaka-pp6mz67r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Junzo Tanaka: Innovator in Semiconductor Technology

Introduction

Junzo Tanaka is a prominent inventor based in Tsukuba, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the growth of single crystals.

Latest Patents

Tanaka holds a patent for a "Method for growing a single crystal of cubic boron nitride semiconductor." This innovative method involves growing a single crystal in a sealed container under high pressure and high temperature conditions. The process includes dissolving a boron nitride starting material in a dopant-containing boron nitride solvent, which is placed in a high-temperature zone. A temperature gradient is then provided to the solvent, allowing the single crystal to form and grow in a lower temperature zone.

Career Highlights

Tanaka is affiliated with the National Institute for Research in Inorganic Materials, where he has made significant strides in semiconductor research. His work has been instrumental in advancing the understanding and application of cubic boron nitride semiconductors.

Collaborations

Some of his notable coworkers include Osamu Fukunaga and Koh Era, who have collaborated with him on various research projects.

Conclusion

Junzo Tanaka's innovative methods in semiconductor technology have paved the way for advancements in the field. His contributions continue to influence research and development in materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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