Shanghai, China

Junqiang Lan

This inventor holds 1 USPTO granted patent. Top assignee: Galaxycore Shanghai Limited Corporation. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junqiang Lan. Retrieved from https://idiyas.com/inventor/junqiang-lan-ix15mziv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Junqiang Lan: Innovator in Dynamic Random Access Memory Technology

Introduction

Junqiang Lan is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random access memory (DRAM) systems. His innovative work has led to advancements that enhance data bandwidth and production efficiency.

Latest Patents

Junqiang Lan holds a patent for a dynamic random access memory (DRAM) and its production method, as well as a semiconductor packaging component and packaging method. The production method involves providing a memory wafer that includes a memory bare chip equipped with a top metal layer containing various bonding pads. This method ensures that the structure of the DRAM remains largely unchanged while increasing its data bandwidth and ensuring a high yield.

Career Highlights

Lan is currently employed at Galaxycore Shanghai Limited Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in DRAM technology has positioned him as a key player in the field.

Collaborations

Some of his notable coworkers include Lixin Zhao and Yang Zhang, who contribute to the innovative environment at Galaxycore Shanghai Limited Corporation.

Conclusion

Junqiang Lan's work in dynamic random access memory technology exemplifies the impact of innovation in the semiconductor industry. His contributions not only advance technology but also enhance production methods, ensuring a brighter future for memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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