Suwon, South Korea

Junki Park

This inventor holds 3 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Samsung Electronics Ltd., Industry-University Cooperation Foundation Hanyang University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junki Park. Retrieved from https://idiyas.com/inventor/junki-park-atoavz5y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 4.8

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Junki Park - Innovator in Semiconductor Technology

Introduction

Junki Park is a talented inventor based in Suwon-si, South Korea. She is currently employed at Samsung Electronics Co., Ltd., where she contributes to advancements in semiconductor technology. Although she has not yet been granted any patents, her work is significant in the field.

Latest Patent Applications

Junki Park has been involved in several notable patent applications. One of her latest applications is for a semiconductor device and method of fabricating the same. This semiconductor device may include a substrate with an active pattern, a source/drain pattern on the active pattern, and an active contact on the source/drain pattern. Additionally, it features a lower power line in the substrate, a lower contact that connects the active contact to the lower power line, and a conductive layer between the lower contact and the lower power line. The conductive layer may consist of silicon (Si) and a first element, which could be a transition metal or a metalloid. The concentration of this first element decreases from the lower contact toward the lower power line.

Another application focuses on semiconductor devices that include a substrate with a first region and a second region. This device features a first gate structure on the first region, a first source/drain layer adjacent to the first gate structure, and a second gate structure on the second region. It also includes a second source/drain layer adjacent to the second gate structure and a first contact plug with a first metal silicide pattern on the first source/drain layer. The first metal silicide pattern consists of a silicide of a first metal and a silicide of a second metal, which is different from the first metal. The device further includes a first conductive pattern on the first metal silicide pattern and a second contact plug with a second metal silicide pattern on the second source/drain layer.

Conclusion

Junki Park is making strides in semiconductor technology at Samsung Electronics Co., Ltd. Her innovative patent applications reflect her commitment to advancing the field. As she continues her work, her contributions may lead to significant developments in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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