Hyogo, Japan

Junji Tateishi


Average Co-Inventor Count = 10.0

ph-index = 2

Forward Citations = 63(Granted Patents)


Company Filing History:


Years Active: 1996-1998

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2 patents (USPTO):Explore Patents

Title: Innovations of Junji Tateishi in Thin-Film Transistor Technology

Introduction

Junji Tateishi is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of thin-film transistors, particularly in the context of CMOS SRAM technology. With a total of 2 patents, his work focuses on enhancing the performance and efficiency of memory cells.

Latest Patents

Tateishi's latest patents include advancements in field effect thin-film transistors. One of his patents describes a method of manufacturing a field effect thin-film transistor (TFT) that achieves stable reading and writing operations in a miniaturized complete CMOS SRAM of a TFT load type. This innovation reduces power consumption while maintaining performance. The TFT is constructed on an insulator and features an active layer and a gate electrode. The gate electrode is positioned on the channel region of the active layer, separated by a gate insulating film. The active layer consists of a channel region and source/drain regions, with the channel region made of a monocrystal silicon layer devoid of grain boundaries. The source/drain regions are formed from a polysilicon layer. The channel region exhibits a density of crystal defects of less than 109 pieces/cm2. The thin-film transistor demonstrates an ON current of 0.25 µA/µm per channel width of 1 µm and an OFF current of 15 fA/µm. This technology can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

Another patent focuses on a field effect thin-film transistor for an SRAM with reduced standby power consumption. Similar to the previous patent, it emphasizes stable reading and writing operations while minimizing power usage.

Career Highlights

Throughout his career, Junji Tateishi has worked with prominent companies such as Mitsubishi Electric Corporation and Ryoden Semiconductor System Engineering Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Tateishi has collaborated with notable professionals in the field, including Hisayuki Nishimura and Kazuyuki Sugahara. Their combined efforts have further advanced the development of thin-film transistors.

Conclusion

Junji Tateishi's contributions to thin-film transistor technology have significantly impacted the efficiency and performance of

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