Tsukuba, Japan

Junji Nakamura

This inventor holds 1 USPTO granted patent. Top assignees: Tokyo Institute of Technology, University of Tsukuba. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junji Nakamura. Retrieved from https://idiyas.com/inventor/junji-nakamura-8nnsym6k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Junji Nakamura: Innovator in Two-Dimensional Materials

Introduction

Junji Nakamura is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of materials science, particularly in the development of two-dimensional materials. His innovative work has led to the creation of a unique sheet containing two-dimensional hydrogen boride.

Latest Patents

Nakamura holds a patent for a "Sheet containing two-dimensional hydrogen boride and production method for sheet containing two-dimensional boron compound." This invention features a two-dimensional network that consists of (HB)(n≥4), showcasing his expertise in advanced material synthesis.

Career Highlights

Throughout his career, Junji Nakamura has been associated with esteemed institutions such as the University of Tsukuba and the Tokyo Institute of Technology. His work at these universities has allowed him to explore and expand the boundaries of material science.

Collaborations

Nakamura has collaborated with notable colleagues, including Takahiro Kondo and Hiroaki Nishino. These partnerships have further enriched his research and contributed to the advancement of two-dimensional materials.

Conclusion

Junji Nakamura's innovative contributions to the field of two-dimensional materials highlight his role as a leading inventor. His patent and collaborations reflect his commitment to advancing material science and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…