Yokohama, Japan

Junichi Ohno


Average Co-Inventor Count = 1.6

ph-index = 3

Forward Citations = 86(Granted Patents)


Company Filing History:


Years Active: 1985

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4 patents (USPTO):Explore Patents

Title: Junichi Ohno: Innovator in Semiconductor Technology

Introduction

Junichi Ohno is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has paved the way for advancements in the manufacturing of semiconductor devices.

Latest Patents

Ohno's latest patents include a method of fabricating a MOS device on a SOS wafer by stabilizing the interface. This method involves forming a monocrystalline silicon layer on a sapphire substrate, ion-implanting silicon and oxygen, and performing annealing to improve the crystal structure. Another notable patent is for a semiconductor device capable of structural selection, which features a first wiring connected as needed and second wirings that can be disconnected as necessary. This innovative design enhances the functionality and efficiency of semiconductor devices.

Career Highlights

Junichi Ohno is associated with Tokyo Shibaura Denki Kabushiki Kaisha, a company known for its advancements in electrical and electronic equipment. His work has been instrumental in developing new technologies that have a lasting impact on the semiconductor industry.

Collaborations

Ohno has collaborated with notable coworkers such as Takao Ohta and Satoshi Konishi. Their combined expertise has contributed to the success of various projects and innovations in semiconductor technology.

Conclusion

Junichi Ohno's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in the industry, showcasing the importance of innovation in technology.

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