Tokyo Shibaura Denki Kabushiki Kaisha

Junichi Ohno

Takao Ohta

Satoshi Konishi

A method for manufacturing a semiconductor device, comprising the steps of forming a monocrystalline silicon layer on a sapphire substrate, ion-implanting silicon and oxygen in a portion of the silicon layer which is in the vicinity of an interface between the substrate and the silicon layer, performing annealing to improve a crystal structure of the portion of the silicon layer in the vicinity of the interface and forming an insulation layer, selectively forming an element isolation region in the silicon layer to obtain an island silicon layer, forming a gate insulation film on the island silicon layer, forming a gate electrode on the gate insulation film, ion-implanting an impurity in the island silicon layer by using the gate electrode as a mask, and annealing a resultant structure to form source and drain regions in the island silicon layer such that bottoms thereof reach a surface of the insulation layer.

Method of fabricating MOS device on a SOS wafer by stabilizing interface

A first wiring to be connected as needed and second wirings to be disconnected as needed are formed three-dimensionally with an insulation film interposed therebetween. The first wiring comprises at least three first semiconductor regions of a second conductivity type formed at predetermined intervals in the surface of a semiconductor substrate of a first conductivity type, and second semiconductor regions of the first conductivity type formed between each pair of adjacent first semiconductor regions. The second wirings are formed on the first wiring through the insulation film and in a number equal to that of the second semiconductor regions. Each second wiring and the corresponding second semiconductor region are located within a spot of a radiating means radiated vertically onto the semiconductor substrate for switching the wirings.

Semiconductor device capable of structural selection

Gate electrodes for respective n channel and p channel transistors are disposed on a semiconductive layer over an oxide layer. A portion of the semiconductive layer existing between the gate electrodes is removed so that the thickness of the semiconductive layer between the gate electrodes is less than that of the semiconductive layer under the gate electrode.

Method for making complementary MOS semiconductor devices

A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.

Growing community of inventors

Yokohama, Japan

Junichi Ohno