Suwon, South Korea

Junghwan Um

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junghwan Um. Retrieved from https://idiyas.com/inventor/junghwan-um-dytdjngn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Junghwan Um: Inventor in Substrate Processing Technology

Introduction

Junghwan Um is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics Co., Ltd. His patent work concerns substrate processing equipment used in semiconductor manufacturing.

Latest Patents

The provided information lists one patent for Um: “Substrate Processing Apparatus.” The invention describes a chamber containing a support member with separate center and edge bias electrodes. Their power supply units apply voltages over a control period, with the change in voltage at the edge electrode greater than the change at the center electrode. This arrangement provides differentiated electrical control across the substrate support.

Career Highlights

Um’s listed patent reflects work on apparatus for processing substrates, a key area of semiconductor manufacturing technology. The supplied information identifies 1 patent associated with him.

Collaborations

The provided information names Hyunjae Lee and Hyun Bae Kim as Um’s coworkers. It does not specify whether they are co-inventors on this patent.

Conclusion

Junghwan Um’s listed invention focuses on controlling center and edge bias voltages in a substrate processing apparatus, contributing to the development of semiconductor manufacturing equipment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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