Hwaseong-si, South Korea

Junghwa You

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junghwa You. Retrieved from https://idiyas.com/inventor/junghwa-you-amkzal6v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Junghwa You: Innovator in Glass Manufacturing

Introduction

Junghwa You is a prominent inventor based in Hwaseong-si, South Korea. She has made significant contributions to the field of glass manufacturing, showcasing her innovative spirit and technical expertise.

Latest Patents

Junghwa You holds a patent for a method of manufacturing glass. This patent involves forming a first etch protection layer on a first surface of a glass substrate and a second etch protection layer on the opposite surface. The process includes removing parts of these protection layers using a laser pulse, etching the glass substrate, and finally removing the protection layers. This innovative method enhances the efficiency and precision of glass manufacturing.

Career Highlights

Junghwa You is currently employed at Samsung Display Co., Ltd., where she continues to develop cutting-edge technologies in glass production. Her work has been instrumental in advancing the capabilities of display technologies.

Collaborations

Some of her notable coworkers include Alexander Voronov and HyungSik Kim, with whom she collaborates on various projects within the company.

Conclusion

Junghwa You's contributions to glass manufacturing exemplify her dedication to innovation and excellence in her field. Her patent and work at Samsung Display Co., Ltd. highlight her role as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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