Yongin, South Korea

Jungho Lee

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Samsung Sdi., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jungho Lee. Retrieved from https://idiyas.com/inventor/jungho-lee-hi7rf4e7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jungho Lee: Advancing Rechargeable Lithium Battery Materials

Introduction

Jungho Lee is an inventor based in Yongin, South Korea, associated with Samsung SDI Co., Ltd. His patent work focuses on materials and components for rechargeable lithium batteries.

Latest Patents

Lee is named on 1 patent: “Negative Active Material for Rechargeable Lithium Battery, Negative Electrode for Rechargeable Lithium Battery, and Rechargeable Lithium Battery Including Same.” The invention describes an agglomerated silicon-based material containing silicon particles, lithium silicate on the particle surfaces, and a first amorphous carbon layer surrounding the silicon and lithium silicate. A second amorphous carbon layer is positioned around the agglomerated product. The material is intended for use in a negative electrode and rechargeable lithium battery.

Career Highlights

Lee’s listed patent reflects work on silicon-based negative active materials for rechargeable batteries. The disclosed structure combines silicon, lithium silicate, and amorphous carbon components in an agglomerated material.

Collaborations

Lee’s listed coworkers include Changsu Shin and Jongmin Kim. The patent record connects their work with Samsung SDI Co., Ltd.

Conclusion

Jungho Lee’s patent contribution centers on a composite silicon-based material designed for rechargeable lithium battery electrodes, highlighting his work in battery innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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