Yongin, South Korea

Jungeun Park

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jungeun Park. Retrieved from https://idiyas.com/inventor/jungeun-park-ph9crw1j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jungeun Park: Inventor in Display Technology

Introduction

Jungeun Park is an inventor based in Yongin, South Korea, and is associated with Samsung Display Co., Ltd. Her recorded patent work concerns display apparatus technology. The available information lists 1 patent for Park.

Latest Patents

Park’s listed patent, “Display apparatus,” describes a system combining a light-emitting panel with a color panel. The light-emitting panel includes a substrate and multiple light-emitting devices. The color panel has a second substrate, a bank with openings corresponding to the devices’ emission areas, and a functional layer arranged in those openings. It also includes two protrusion patterns on the bank: one positioned between adjacent openings and another spaced apart from it.

Career Highlights

Park’s recorded invention reflects work in display-panel design, particularly the arrangement of color-panel structures and protrusion patterns in relation to light-emitting areas. The available details identify Samsung Display Co., Ltd. as her company.

Collaborations

Beomhee Han and Kangwoo Kim are listed as Park’s coworkers. The provided information does not specify whether they collaborated with her on the “Display apparatus” patent.

Conclusion

Jungeun Park’s listed patent documents a display apparatus design that integrates light-emitting and color-panel components, including carefully arranged openings and protrusion patterns.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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