Ansan, South Korea

Jung Kwan Kim

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung Kwan Kim. Retrieved from https://idiyas.com/inventor/jung-kwan-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2020-2022

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3 patents (USPTO):Explore Patents

Title: Innovations of Jung Kwan Kim

Introduction

Jung Kwan Kim is a notable inventor based in Ansan-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work primarily focuses on enhancing the efficiency and functionality of memory technology.

Latest Patents

One of his latest patents is titled "Page buffer and memory device including the same." This invention describes a memory device that includes a memory cell array with multiple memory cell strings and bit lines connected to these strings. The device features several page buffers linked to the bit lines, where each page buffer contains multiple latches that share a single data transfer node. This design allows for efficient data exchange among the latches through the data transfer node, facilitated by a pass transistor that connects the data transfer node to another node in a different page buffer.

Career Highlights

Jung Kwan Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of innovation in memory technology, contributing to the development of advanced memory devices.

Collaborations

Throughout his career, Jung Kwan Kim has collaborated with talented individuals such as Yong Sung Cho and Jeung Hwan Park. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jung Kwan Kim's contributions to memory device technology exemplify the spirit of innovation. His patents reflect a commitment to advancing the capabilities of memory systems, making a lasting impact in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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