Gyeonggi-do, South Korea

Jung-kun Shin

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-kun Shin. Retrieved from https://idiyas.com/inventor/jung-kun-shin-3d1qkec4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Jung-kun Shin and LCD Manufacturing Innovation.

Introduction

Jung-kun Shin is an inventor associated with Gyeonggi-do, South Korea, and Samsung Electronics Co., Ltd. His patent work addresses a manufacturing method for liquid crystal displays (LCDs).

Latest Patents

The available information lists one patent for Shin: “Method and Apparatus for Manufacturing an LCD.” The invention describes preparing a liquid crystal panel with a polarizing plate attached to its substrate assembly, then directing a gas-injecting part toward the plate while it remains exposed to atmospheric conditions. Injected gas applies pressure to the plate surface, helping remove bubbles between the polarizing plate and the panel without requiring a chamber. The record lists 1 patent.

Career Highlights

Shin’s listed patent focuses on improving an LCD manufacturing process by offering an approach to bubble removal that does not rely on a chamber. He is associated with Samsung Electronics Co., Ltd.

Collaborations

The provided information names Sung-Jin Lee and Goang-young Park as Shin’s coworkers. It does not specify whether they collaborated with him on this patent.

Conclusion

Jung-kun Shin’s listed invention presents a chamber-free method for removing bubbles during LCD manufacturing, reflecting a practical focus on display production processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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