This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016.
Company Filing History:
Years Active: 2016
Title: Jung-Hun No: Innovator in Non-Volatile Memory Technology
Introduction
Jung-Hun No is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of non-volatile memory devices. His innovative work has led to the development of advanced technologies that enhance data storage solutions.
Latest Patents
Jung-Hun No holds a patent for a non-volatile memory device and the method of manufacturing the same. The patent describes a process where a preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern. A trench is defined between structures, including the active pattern, the preliminary tunnel insulation pattern, and the preliminary charge storage pattern. The invention also details the formation of a dielectric layer and a control gate electrode layer, which are patterned to create gate structures. This innovative approach improves the efficiency and reliability of memory devices.
Career Highlights
Jung-Hun No is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory technology advancements. With 1 patent to his name, he continues to push the boundaries of what is possible in data storage.
Collaborations
Jung-Hun No has collaborated with notable colleagues, including Jae-Jin Shin and Kyung-Hyun Kim. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking developments in memory technology.
Conclusion
Jung-Hun No is a key figure in the advancement of non-volatile memory technology. His contributions have the potential to shape the future of data storage solutions. His work exemplifies the spirit of innovation that drives the technology industry forward.