Jung Hee Lee

Title: Innovations of Jung Hee Lee in Gallium Nitride Technology

Introduction

Jung Hee Lee is an accomplished inventor based in Rolling Hills Estates, California. He has made significant contributions to the field of semiconductor technology, particularly in gallium nitride (GaN) devices. His innovative work has led to the development of advanced circuits that enhance the performance of power converters.

Latest Patents

Jung Hee Lee holds a patent for a "Monolithic high side gallium nitride device with integrated capacitive level shifter circuits." This invention focuses on monolithic high side GaN-based circuits that utilize capacitors for level shifting. The patent describes a power converter that includes a GaN-based die, a switch formed on the die, and a buffer circuit that generates differential output signals. The voltage level converter, also formed on the GaN-based die, is designed to generate the driver signal necessary for the switch's operation.

Career Highlights

Jung Hee Lee is currently employed at Navitas Semiconductor Limited, where he continues to push the boundaries of semiconductor technology. His work at Navitas has been instrumental in advancing the capabilities of GaN devices, making them more efficient and reliable for various applications.

Collaborations

Throughout his career, Jung Hee Lee has collaborated with notable colleagues, including Marco Giandalia and Santosh Sharma. These collaborations have fostered an environment of innovation and have contributed to the successful development of cutting-edge technologies in the semiconductor industry.

Conclusion

Jung Hee Lee's contributions to gallium nitride technology exemplify the impact of innovative thinking in the semiconductor field. His patent and work at Navitas Semiconductor Limited highlight his commitment to advancing technology and improving power conversion systems.