West Lafayette, IN, United States of America

Jung Han

This inventor holds 2 USPTO granted patents. Top assignee: Research Corporation Technologies, Inc.. Active years: 1996-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung Han. Retrieved from https://idiyas.com/inventor/jung-han-xyfxy96v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1996-1997

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations of Jung Han in Semiconductor Technology

Introduction

Jung Han is a notable inventor based in West Lafayette, IN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. With a total of 2 patents, his work has advanced the understanding and application of Group II-VI compound semiconductors.

Latest Patents

Jung Han's latest patents include innovations in Group II-VI compound semiconductor light-emitting devices. One of his patents discloses an ohmic contact for these devices, which includes at least one II-VI quantum well region of a well layer disposed between first and second barrier layers. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C, wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact can be utilized. This contact can be a single continuously graded II-VI p-type region or a plurality of cells, each having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of his invention discloses a monolithic multicolor light-emitting element capable of emitting four colors, along with a method for fabricating the same. This multicolor element includes four II-VI semiconductor light-emitting devices formed on a single III-V substrate.

Career Highlights

Jung Han is currently employed at Research Corporation Technologies, Inc., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of light-emitting devices, making them more efficient and versatile.

Collaborations

Throughout his career, Jung Han has collaborated with notable colleagues such as Li He and Yongping Fan. These collaborations have contributed to the success of his projects and the advancement of semiconductor technology.

Conclusion

Jung Han's contributions to semiconductor technology, particularly

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…