Anyang, South Korea

Jung Gul Lee

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Ls Materials Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung Gul Lee. Retrieved from https://idiyas.com/inventor/jung-gul-lee-068i43uh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Jung Gul Lee in Energy Storage Technology.

Introduction

Jung Gul Lee is a notable inventor based in Anyang-si, South Korea. He has made significant contributions to the field of energy storage technology. His innovative approach has led to the development of a unique energy storage device.

Latest Patents

Jung Gul Lee holds 1 patent for his energy storage device. This device comprises a housing for accommodating an electrolyte, an electrode element inside the housing, and a case coupled to one side of the housing. Additionally, it features an electrode terminal that is electrically connected to the electrode element. The case includes a base part with a through-hole for the electrode terminal and a sealing part that ensures the space between the base part and the electrode terminal is sealed effectively.

Career Highlights

Jung Gul Lee has been instrumental in advancing energy storage solutions through his innovative designs. His work has garnered attention in the industry, showcasing his expertise and commitment to improving energy efficiency.

Collaborations

Jung Gul Lee collaborates with Kyeong Hoon Park, contributing to the development of cutting-edge technologies in their field.

Conclusion

Jung Gul Lee's contributions to energy storage technology highlight his role as an innovative inventor. His patent for an energy storage device demonstrates his commitment to advancing this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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