Kumi-shi, South Korea

Jung-Eon Park


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Jung-Eon Park: Innovator in Semiconductor Technology

Introduction

Jung-Eon Park is a notable inventor based in Kumi-shi, South Korea. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work has implications for the efficiency and performance of electronic devices.

Latest Patents

One of Jung-Eon Park's key patents is for a shorted anode lateral insulated gate bipolar transistor. This invention includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, and various impurity regions. This technology aims to enhance the performance of power electronics.

Career Highlights

Jung-Eon Park is currently employed at Korea Electronics Co., Ltd., where he continues to develop cutting-edge technologies. His work has led to advancements in semiconductor devices, contributing to the overall progress in the electronics industry.

Collaborations

He has collaborated with notable colleagues, including Min-Koo Han and Byeong-Hoon Lee, to further enhance the research and development efforts within his company.

Conclusion

Jung-Eon Park's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the electronics industry positively.

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