Korea Electronics Co., Ltd.

Jung-Eon Park

Byeong-Hoon Lee

Min-Koo Han

Yearn-Ik Choi

Moo-Sup Lim

Won-Oh Lee

A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.

Growing community of inventors

Kumi-shi, South Korea

Jung-Eon Park