Company Filing History:
Years Active: 2018
Title: Jun-Wei Peng: Innovator in Resistive Memory Technology
Introduction
Jun-Wei Peng is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of resistive memory technology, holding a total of 2 patents. His work is characterized by innovative designs that enhance the functionality and efficiency of memory elements.
Latest Patents
One of Jun-Wei Peng's latest patents is for a resistive memory element. This invention includes a P-type layer, a tunneling structure, and an N-type layer. The tunneling structure is formed on the P-type layer, while the N-type layer is formed on the tunneling structure. When a bias voltage higher than a reset voltage is applied to the P-type layer and the N-type layer, the resistive memory element enters a reset state. Conversely, when a bias voltage lower than a set voltage is applied, the element is in a set state. Another significant patent involves a substrate with a lithium imide layer, an LED with a lithium imide layer, and the manufacturing method thereof. This substrate comprises a lithium niobate layer and a lithium imide layer, with the latter formed on the surface of the lithium niobate layer.
Career Highlights
Jun-Wei Peng is currently employed at Opto Tech Corporation, where he continues to develop innovative technologies. His work at the company has positioned him as a key player in the advancement of memory technologies.
Collaborations
He collaborates with talented coworkers, including Lung-Han Peng and Yen-Kai Chang, who contribute to his projects and innovations.
Conclusion
Jun-Wei Peng's contributions to resistive memory technology and his innovative patents reflect his expertise and commitment to advancing the field. His work at Opto Tech Corporation and collaborations with fellow inventors further enhance his impact on technology.