Company Filing History:
Years Active: 2017
Title: Innovations by Jun Nakauchi in Semiconductor Technology.
Introduction
Jun Nakauchi is a notable inventor based in Kiyosu, Japan. He has made significant contributions to the field of semiconductor technology. His innovative methods have led to advancements in the efficiency of semiconductor devices.
Latest Patents
Jun Nakauchi holds a patent for a method for producing a semiconductor device. This invention focuses on improving emission efficiency by reducing strain between a p-contact layer and a transparent electrode. The process involves forming a transparent electrode made of IZO (Zinc-doped Indium Oxide) on a p-type contact layer through vapor deposition or sputtering. The subsequent steps include p-type activation of the cladding and contact layers, followed by crystallization of the transparent electrode through indirect resistance heating. This heat treatment occurs under reduced pressure at a temperature of 700°C. Additionally, microwave heating is applied for three to thirty minutes at temperatures ranging from 100°C to 350°C, utilizing microwave irradiation at a frequency of 5.8 GHz in a nitrogen atmosphere. This innovative approach effectively reduces strain on the transparent electrode, enhancing its conductivity and translucency.
Career Highlights
Jun Nakauchi is associated with Toyoda Gosei Co., Ltd., where he continues to develop and refine his inventions. His work has been instrumental in advancing semiconductor technology, particularly in improving device performance.
Collaborations
Jun Nakauchi collaborates with Shingo Totani, a talented woman in the field. Their partnership has fostered innovative solutions and advancements in semiconductor technology.
Conclusion
Jun Nakauchi's contributions to semiconductor technology through his innovative patent demonstrate his commitment to enhancing device efficiency. His work continues to influence the industry positively.