The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jan. 08, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Shingo Totani, Kiyosu, JP;
Jun Nakauchi, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present invention provides a method for producing a semiconductor device exhibiting the improved emission efficiency by reducing a strain between a p-contact layer and a transparent electrode. A transparent electrode made of IZO (Zinc-doped Indium Oxide) was formed on a p-type contact layer by vapor deposition or sputtering. Subsequently, a p-type cladding layer and a p-type contact layer were p-type activated and a transparent electrode was crystallized by indirect resistance heating. This heat treatment was performed under a reduced pressure at a temperature of 700° C. Next, microwave heating was performed for three to thirty minutes at a temperature of 100° C. to 350° C. by microwave irradiation with a frequency of 5.8 GHz in a nitrogen atmosphere. This reduced a strain of the transparent electrode, and improved the conductivity or translucency of the transparent electrode.