Seoul, South Korea

Jun-Myung Woo

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun-Myung Woo. Retrieved from https://idiyas.com/inventor/jun-myung-woo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Jun-Myung Woo and Memory Device Innovation.

Introduction

Jun-Myung Woo is an inventor based in Seoul, South Korea, associated with Samsung Electronics Co., Ltd. His patent work includes a memory-device design intended to improve the performance of sense amplification.

Latest Patents

The provided information identifies one patent for Woo: “Memory Device with Switchable Sense Amplifier.” The invention uses a sense amplification unit and multiple switches to control operations including pre-charging, offset cancellation, charge sharing, sensing, and re-storing. By compensating for sense-amplifier offset, the design can improve the effective sensing margin and enhance memory-device performance. The supplied information does not establish when this patent was granted or whether it is his latest patent. Woo is credited with 1 patent in the information provided.

Career Highlights

Woo’s listed work is connected to Samsung Electronics Co., Ltd. and focuses on memory circuitry, particularly the operation of sense amplifiers in memory devices.

Collaborations

Young-Seok Park is identified as Woo’s coworker. The provided information does not specify their roles or the nature of any collaboration on the patent.

Conclusion

Jun-Myung Woo’s listed patent presents a switchable sense-amplifier approach designed to compensate for offset and improve sensing performance in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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