Jun Iijima

Title: Jun Iijima: Innovator in Semiconductor Technology

Introduction

Jun Iijima is a notable inventor based in Sendai, Japan, recognized for his contributions to semiconductor technology. With a total of two patents to his name, Iijima has made significant advancements in the field, particularly in multilevel interconnect structures.

Latest Patents

Iijima's latest patents focus on a semiconductor device featuring a multilevel interconnect structure and methods for its fabrication. This innovative structure includes a first insulating layer on a semiconductor wafer, a copper interconnect layer on the first insulating layer, a second insulating layer on the copper interconnect layer, and a metal oxide layer at the interface between the copper interconnect layer and the second insulating layer. The metal oxide layer is created by immersion-plating a metal, such as tin or zinc, on the copper interconnect layer, followed by heat treatment in an oxidizing atmosphere. This method enhances the performance and reliability of semiconductor devices.

Career Highlights

Throughout his career, Jun Iijima has worked with esteemed organizations such as the Semiconductor Technology Academic Research Center and Tohoku University. His work in these institutions has contributed to the advancement of semiconductor research and technology.

Collaborations

Iijima has collaborated with notable colleagues, including Junichi Koike and Yoshito Fujii, who have also made significant contributions to the field of semiconductor technology.

Conclusion

Jun Iijima's innovative work in semiconductor devices and his collaborations with other experts highlight his important role in advancing technology. His patents reflect a commitment to improving the efficiency and functionality of semiconductor structures.