Seongnam, South Korea

Jum-han Bae

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Inha-Industry Partnership Institute. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jum-han Bae. Retrieved from https://idiyas.com/inventor/jum-han-bae-eahh351l

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 40.0

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Seongnam-si, KR (2014 - 2019)
  • Gyeonggi-do, KR (2019)

Company Filing History:


Years Active: 2014-2019

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5 patents (USPTO):Explore Patents

Title: Inventor Jum-han Bae: Pioneering Innovations in Seongnam-si

Introduction: Jum-han Bae is a visionary inventor based in Seongnam-si, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jum-han Bae holds several patents in the areas of artificial intelligence, robotics, and sustainable energy solutions, showcasing her commitment to creating cutting-edge technologies that shape the future.

Career Highlights: With a career spanning over two decades, Jum-han Bae has worked with top research institutions and leading tech companies to bring her inventions to life. Her dedication to pushing the boundaries of what is possible has earned her recognition as a trailblazer in the industry.

Collaborations: Throughout her career, Jum-han Bae has collaborated with fellow inventors, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing that has led to the development of revolutionary technologies.

Conclusion: Inventor Jum-han Bae's passion for innovation, coupled with her relentless drive to create a better future through technology, continues to inspire the next generation of inventors and entrepreneurs. Her impact on the world of inventions is truly remarkable.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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