Rousset, France

Julien Dura

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignees: Stmicroelectronics (Crolles 2) Sas, Stmicroelectronics (Rousset) Sas. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Julien Dura. Retrieved from https://idiyas.com/inventor/julien-dura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Julien Dura and Semiconductor Invention.

Introduction

Julien Dura is an inventor associated with Rousset, France. His patent work concerns semiconductor device design, including the structure of a MOSFET transistor.

Latest Patents

Dura is associated with 1 patent. The patent describes a MOSFET transistor with source, drain, and body regions arranged in a semiconductor layer, with a gate region above the body. The body includes a first doped layer and a less heavily doped epitaxial layer positioned between the first layer and the gate region.

Career Highlights

Dura is associated with STMicroelectronics (Rousset) SAS and STMicroelectronics (Crolles 2) SAS. His patent reflects work on the design of transistor structures and semiconductor layers.

Collaborations

His listed coworkers include Franck Julien and Julien Amouroux.

Conclusion

Julien Dura’s recorded invention focuses on a MOSFET structure with a layered body region, and his professional associations include two STMicroelectronics entities in France.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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