Hsinchu, Taiwan

Jui-Hsiang Yang

This inventor holds 1 USPTO granted patent. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jui-Hsiang Yang. Retrieved from https://idiyas.com/inventor/jui-hsiang-yang-ypqgtake

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Jui-Hsiang Yang: Innovator in Flash Memory Technology

Introduction

Jui-Hsiang Yang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in flash memory fabrication methods. His innovative approach has led to advancements that enhance the efficiency and performance of flash memory devices.

Latest Patents

Jui-Hsiang Yang holds a patent for a "Fabrication method for flash memory source line and flash memory." This method involves a detailed process that includes providing a substrate, a first insulation layer, a first conductive layer, and a second insulation layer. The second insulation layer is patterned to create a first opening, revealing part of the first conductive layer. A third insulation layer is then formed on the first opening sidewall to create a second opening. The first conductive layer and the first insulation layer beneath the second opening are etched to expose the substrate surface. A spacer is formed on the second opening sidewall, leading to the formation of a source region in the exposed substrate and a source line with a concave surface in the second opening. Finally, a mask layer is formed on the source line concave surface.

Career Highlights

Jui-Hsiang Yang is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing advanced fabrication techniques that contribute to the evolution of flash memory technology.

Collaborations

Throughout his career, Jui-Hsiang Yang has collaborated with talented individuals such as Ing-Ruey Liaw and Yue-Feng Chen. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Jui-Hsiang Yang's contributions to the field of flash memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at Vanguard International Semiconductor Corporation highlight his commitment to advancing technology and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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