Company Filing History:
3 out of 164,219 
1 out of 30,052 
Years Active: 1999-2000
Title: Juergen Faul: Innovator in Semiconductor Technology
Introduction
Juergen Faul is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of field effect transistors.
Latest Patents
One of Juergen Faul's latest patents is titled "Geometrical control of device corner threshold." This invention addresses corner conduction in a conduction channel of a field effect transistor. The innovation involves controlling the geometrical configuration of the gate oxide and gate electrode at the sides of the conduction channel. By rounding the corners of the conduction channel or forming depressions at the edges of trench structures, recesses are developed in the substrate surface. This design allows the gate oxide and gate electrode to effectively wrap around a portion of the conduction channel. The geometry of the gate electrode enables modification of the electric field in the conduction channel without angled implantation. This regulation of corner conduction enhances the conduction characteristics near cut-off, allowing for tailored applications and reduced conduction/cut-off threshold voltage through a simple and efficient manufacturing process.
Career Highlights
Throughout his career, Juergen Faul has worked with prominent companies such as IBM and Siemens Aktiengesellschaft. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Juergen has collaborated with notable professionals in the field, including Wayne S Berry and Wilfried Haensch. These collaborations have further enriched his work and contributions to the industry.
Conclusion
Juergen Faul's innovative work in semiconductor technology, particularly in the area of field effect transistors, showcases his commitment to advancing the field. His patents reflect a deep understanding of the complexities involved in device design and manufacturing.