Ju-Tae Moon

Title: Innovations of Ju-Tae Moon in Integrated Circuit Capacitors

Introduction

Ju-Tae Moon is a notable inventor based in Kyunggi-do, South Korea. He has made significant contributions to the field of integrated circuit capacitors, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of capacitors used in electronic devices.

Latest Patents

One of Ju-Tae Moon's latest patents involves methods of forming integrated circuit capacitors that utilize doped hemispherical grain (HSG) electrodes. This innovative approach includes the formation of a lower electrode by creating a conductive layer pattern on a semiconductor substrate. A HSG silicon surface layer of the first conductivity type is then added to increase the effective surface area of the lower electrode. The HSG silicon surface layer is doped with first conductivity type dopants to minimize the depletion layer size when the capacitor is reverse biased, thereby improving the capacitor's characteristic Cmin/Cmax ratio. Additionally, a diffusion barrier layer is formed on the lower electrode, followed by a dielectric layer that enhances capacitance due to its high dielectric strength.

Career Highlights

Ju-Tae Moon is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits, making them more efficient and reliable.

Collaborations

Some of his notable coworkers include Seung-Hwan Lee and Sang-Hyeop Lee, who have collaborated with him on various projects related to integrated circuit technology.

Conclusion

Ju-Tae Moon's contributions to the field of integrated circuit capacitors demonstrate his expertise and commitment to innovation. His patents reflect a deep understanding of semiconductor technology and its applications in modern electronics.