Ju Hyun Park

Title: Ju Hyun Park: Innovator in Static Random Access Memory Technology

Introduction

Ju Hyun Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of static random access memory (SRAM) technology, holding a total of five patents. His innovative work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

One of his latest patents is titled "Static random access memory including assist circuit." This invention discloses a static random access memory that incorporates an assist circuit. The SRAM includes a bit cell part with at least one bit cell connected between two ground voltage nodes. A controller manages the connection between these nodes using multiple transistors to control the ground voltages supplied to the bit cell part.

Another notable patent is "Static random access memory cell capable of performing differential operation." This SRAM cell is designed to perform differential operations and includes a data node portion with four transistors forming first and second data nodes. It also features a data controller that manages the read and write operations of data in these nodes, utilizing a control transistor influenced by a driving voltage.

Career Highlights

Ju Hyun Park has worked with esteemed organizations such as Yonsei University and Stats Chippac Pte. Ltd. His experience in these institutions has allowed him to collaborate on various innovative projects, furthering advancements in memory technology.

Collaborations

Throughout his career, Ju Hyun Park has collaborated with notable colleagues, including Seong Ook Jung and Han Wool Jeong. These partnerships have contributed to the development of cutting-edge technologies in the field of SRAM.

Conclusion

Ju Hyun Park's contributions to static random access memory technology highlight his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving memory systems, making a lasting impact on technology.