Company Filing History:
Years Active: 2004-2010
Title: Ju Gao: Innovator in Epitaxial Growth Techniques
Introduction
Ju Gao is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of materials science, particularly in the development of innovative techniques for growing thin films. With a total of 2 patents, his work has implications for various applications in semiconductor technology.
Latest Patents
One of Ju Gao's latest patents involves a process and structure that utilizes pulsed laser deposition techniques to grow SrTiO (STO) films with a single (110) out-of-plane orientation on silicon substrates. This invention eliminates the need for a designed buffer layer beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si (100) are as follows: STO [001]//Si [001] and STO [10]/Si [010]. The SrTiO/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between silicon and a Sr-silicate or STO helps to stabilize STO in the epitaxial orientation. This invention can be applied to epitaxial templates and barriers for integrating various functional oxide materials on silicon. In particular, the (110)-oriented STO structure is beneficial for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices and addressing polarity discontinuities at perovskite heterointerfaces.
Another notable patent by Ju Gao is related to Josephson junctions with a continually graded barrier. This invention includes first and second electrodes made of superconductive material. The barrier of the junction extends from the first electrode to the second electrode and is formed of both non-superconductive and superconductive barrier materials. A concentration of the superconductive barrier material is greater than zero at the first barrier face, allowing for enhanced performance in superconductive applications.
Career Highlights
Ju Gao is affiliated with The University of Hong Kong, where he continues to advance research in materials science and engineering. His innovative approaches have garnered attention in the academic community and beyond.
Collaborations
Ju Gao has collaborated with notable colleagues, including Jianhua Hao and Jinglan Sun, contributing to a rich environment of research and innovation.
Conclusion
Ju Gao's work exemplifies the intersection of innovation and practical application in the field of materials