The University of Hong Kong

Ju Gao

Jianhua Hao

Jinglan Sun

A process and structure utilizes pulsed laser deposition technique to grow SrTiO(STO) films with single (110) out-of-plane orientation upon a surface of all (100), (110) and (111)-oriented silicon (Si) substrates. No designed buffer layer is needed beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si (100) are as STO [001]//Si [001] and STO [10]/Si [010]. The SrTiO/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between Si and a Sr-silicate and/or STO helps to stabilize STO in the epitaxial orientation. The invention can be applied to epitaxial template and barrier for the integration of many other functional oxide materials on silicon. In particular, the (110)-oriented STO structure is useful for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices as well as providing a broad solution to the generic problem of polarity discontinuities at perovskite heterointerfaces.

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A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material.

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Hong Kong, China

Ju Gao