Jr-Shang Shie

Title: Jr-Shang Shie: Innovator in Charging Circuit Technology

Introduction

Jr-Shang Shie is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of electrical engineering, particularly in the development of charging circuits. His innovative approach has led to the creation of a patented technology that enhances the efficiency of charging systems.

Latest Patents

Jr-Shang Shie holds a patent for a charging circuit integrated into a chip. This invention comprises several key components, including a charging unit, a switch unit, a biasing unit, a voltage-dividing unit, and a comparing unit. The charging unit is designed to connect between a power supply input and a load, outputting a constant current based on a constant bias voltage. This design allows for efficient charging of the load. The switch unit controls the operation of the charging unit, while the voltage-dividing unit generates a signal for the comparing unit, which ensures optimal performance by comparing signals to manage the charging process effectively. Jr-Shang Shie has 1 patent to his name.

Career Highlights

Jr-Shang Shie is currently employed at Acer Inc., a leading technology company known for its innovative products and solutions. His work at Acer has allowed him to collaborate with other talented professionals in the field, contributing to advancements in technology.

Collaborations

Some of his notable coworkers include Chua-Chin Wang and Shao-Fu Yen. Their collaborative efforts have fostered an environment of innovation and creativity within the company.

Conclusion

Jr-Shang Shie is a prominent figure in the realm of charging circuit technology, with a focus on creating efficient solutions for modern electrical systems. His contributions continue to impact the industry positively.