Hwaseong, South Korea

Joung Hoe Kim

This inventor holds 21 USPTO granted patents and 7 published patent applications and 7 EPO patents, primarily in RF Filter Technology. Top assignee: Kmw Inc. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joung Hoe Kim. Retrieved from https://idiyas.com/inventor/joung-hoe-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Switchable Filter
Cavity Filter
RF Filter Assembly
Dielectric Ceramic Filter
Antenna Device
Coaxial Connector
Resonator
Conductive Terminals
Metal Material Support
Elastic Member
Connecting Structure
21 patents (USPTO):Explore Patents

Title: Inventor Joung Hoe Kim: Revolutionizing Technology in Hwaseong-si, KR

Introduction: Joung Hoe Kim is a visionary inventor based in Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Kim's latest patents include innovative solutions in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Joung Hoe Kim has established himself as a prominent figure in the tech industry, with a strong focus on developing sustainable and cutting-edge technologies.

Collaborations: Kim has collaborated with leading research institutions, universities, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing in his pursuit of technological advancement.

Conclusion: Joung Hoe Kim's relentless passion for innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field, shaping the future of industries and inspiring the next generation of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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