José Millan

Title: José Millan: Innovator in Field-Effect Transistor Technology

Introduction

José Millan is a notable inventor based in Barcelona, Spain. He has made significant contributions to the field of semiconductor technology, particularly in the development of junction field-effect transistors (JFETs). His innovative methods have paved the way for advancements in electronic devices.

Latest Patents

José Millan holds a patent for a method of producing a junction field-effect transistor. This invention involves several key steps, including the formation of trenches in a semi-conductive substrate, the implantation of ions to create an active gate area, the deposition of a layer of polycrystalline silicon, oxidation of this layer, and metallization of the substrate to form active source and drain areas. This method enhances the efficiency and performance of field-effect transistors.

Career Highlights

Throughout his career, José Millan has worked with prestigious institutions such as the Institut National Des Sciences Appliquées de Lyon and Université Claude Bernard – Lyon 1. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

José has collaborated with notable professionals in his field, including Dominique Tournier and Florian Chevalier. These collaborations have further enriched his work and have led to advancements in the technology surrounding field-effect transistors.

Conclusion

José Millan's contributions to the field of semiconductor technology, particularly through his patented methods for producing junction field-effect transistors, highlight his role as an influential inventor. His work continues to impact the development of electronic devices and semiconductor applications.