Carmichael, CA, United States of America

Josphine J Chang

This inventor holds 2 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 2008-2010.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2008-2010

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Josphine J Chang

Introduction

Josphine J Chang is a prominent inventor based in Carmichael, CA (US). She has made significant contributions to the field of electron beam technology, holding 2 patents that showcase her innovative approach to improving electron beam treatment processes.

Latest Patents

One of her latest patents is titled "Clean process for an electron beam source." This invention outlines a method for cleaning an electron beam treatment apparatus. The process includes generating an electron beam that energizes a cleaning gas in a chamber of the apparatus, monitoring the electron beam current, adjusting the pressure of the cleaning gas to maintain a substantially constant electron beam current, and stopping when a predetermined condition has been reached. This innovative method enhances the efficiency and effectiveness of electron beam treatments.

Career Highlights

Josphine is currently employed at Applied Materials, Inc., where she continues to develop cutting-edge technologies in the field. Her work has not only advanced the understanding of electron beam processes but has also contributed to the overall improvement of manufacturing techniques in various industries.

Collaborations

Some of her notable coworkers include Alexandros T Demos and Khaled A Elsheref, with whom she collaborates on various projects related to electron beam technology.

Conclusion

Josphine J Chang's contributions to the field of electron beam technology are noteworthy and reflect her dedication to innovation. Her patents and work at Applied Materials, Inc. demonstrate her commitment to advancing technology and improving industrial processes.

Profile summary based on public USPTO records.
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