This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Other. Active years: 1998.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 834,513 Years Active: 1998
Title: The Innovations of Joseph Tate Evans, Jr. in Semiconductor Technology
Introduction: Joseph Tate Evans, Jr. is an innovative inventor based in Albuquerque, NM, known for his contribution to semiconductor technology. He holds a crucial patent dedicated to improving the performance of indium oxide semiconductors, which plays a vital role in various electronic devices.
Latest Patents: Joseph Tate Evans, Jr. is the inventor of a patent titled "Method for restoring the resistance of indium oxide semiconductors after high temperature annealing." This patent addresses a significant challenge in semiconductor device fabrication, where indium oxide resistive layers often experience increased resistivity when subjected to high-temperature annealing processes. His method introduces a recovery annealing step that effectively restores the original resistivity of the Indium Oxide layer, even when it is sealed under a dielectric layer. The recovery anneal involves heating the resistive layer to temperatures between 100°C and 300°C, with the duration of the heat treatment depending on the annealing temperature.
Career Highlights: With a focus on semiconductor technology, Joseph has made a substantial impact through his innovative approaches to material resistance. His dedication to enhancing electronic performance showcases his expertise in the field and his commitment to pushing the boundaries of technology. Joseph's work is essential for the continuous improvement of devices that rely on indium oxide semiconductors.
Collaborations: Joseph Tate Evans, Jr. has collaborated with his coworker, Carleton H Seager, contributing to advancements in semiconductor fabrication technologies. Their teamwork highlights the collective effort often necessary to achieve breakthroughs in the field of innovation.
Conclusion: Joseph Tate Evans, Jr. exemplifies the spirit of innovation within the semiconductor industry. Through his patented method for restoring the resistance of indium oxide semiconductors, he has provided an essential solution for challenges faced in device fabrication. His contributions underscore the importance of persistent research and collaboration in advancing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile