Joseph Francis Rohlman

Title: Joseph Francis Rohlman: Innovator in Low-Power Memory Technology

Introduction

Joseph Francis Rohlman is a notable inventor based in Iowa City, IA. He has made significant contributions to the field of memory technology, particularly in the development of low-power static random access memory (SRAM). With a total of two patents to his name, Rohlman continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

Rohlman's latest patents focus on low-power static random access memory. The first patent describes a static random-access memory that includes a word line circuit for generating a word line signal. It features a plurality of six-transistor memory cells arranged between a first bitline, a second bitline, and the word line. This design allows for the simultaneous selection of either all or a portion of the memory cells for data reading or writing. Each memory cell comprises first and second n-channel transistors, along with a bitline precharge circuit that precharges the bitlines to a voltage of Vdd/2 before the n-channel transistors receive the word line signal. This innovative approach enhances the efficiency and performance of memory systems.

Career Highlights

Rohlman is currently employed at Untether AI Corporation, where he applies his expertise in memory technology. His work at the company reflects his commitment to advancing the field and developing cutting-edge solutions that meet the demands of modern computing.

Collaborations

Throughout his career, Rohlman has collaborated with talented individuals such as Katsuyuki Sato and William Martin Snelgrove. These partnerships have contributed to the successful development of his innovative technologies.

Conclusion

Joseph Francis Rohlman is a distinguished inventor whose work in low-power static random access memory has made a significant impact on the technology landscape. His contributions continue to shape the future of memory systems, demonstrating the importance of innovation in this field.