Munich, Germany

Jörg Berthold



Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 33(Granted Patents)


Location History:

  • Munich, DE (2006 - 2008)
  • München, DE (2006 - 2011)

Company Filing History:


Years Active: 2006-2011

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):

Title: Jorg Berthold: Innovator in Semiconductor Technology

Introduction

Jorg Berthold is a prominent inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of threshold voltage adjustment in integrated devices. His innovative approach addresses critical challenges faced in semiconductor fabrication.

Latest Patents

Jorg Berthold holds a patent for a semiconductor device designed to adjust threshold value shifts caused by the short channel effect. This device is capable of detecting and adjusting leakage current based on the threshold voltage of an integrated semiconductor device. The invention proposes a method to compare small and long channel devices to mitigate variations in threshold voltage due to uncertainties in channel length during the fabrication process. By providing a bias potential based on the comparison results, the device effectively adjusts the threshold voltage, enhancing performance and reliability.

Career Highlights

Jorg Berthold is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to apply his expertise in developing advanced semiconductor technologies that meet the demands of modern electronics.

Collaborations

Jorg collaborates with Rafael Nadal Guardia, contributing to innovative projects within the semiconductor industry. Their partnership exemplifies the importance of teamwork in driving technological advancements.

Conclusion

Jorg Berthold's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the industry. His work continues to influence the development of more efficient and reliable semiconductor devices.

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