The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Aug. 13, 2003
Applicants:
Jorg Berthold, Munich, DE;
Rafael Nadal Guardia, Munich, DE;
Inventors:
Jorg Berthold, Munich, DE;
Rafael Nadal Guardia, Munich, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device detects and adjusts leakage current dependent on threshold voltage of an integrated semiconductor device. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage.