Seongnam, South Korea

Joong S Jeong

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joong S Jeong. Retrieved from https://idiyas.com/inventor/joong-s-jeong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Joong S Jeong: Innovator in Semiconductor Technology

Introduction

Joong S Jeong is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of forming nanowires.

Latest Patents

Joong S Jeong holds a patent for a "Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire." This patent describes a method that includes forming a patterned SiGe layer on a base layer and creating a first oxide layer along with at least one nanowire through a first oxidation process on the patterned SiGe layer. This invention is crucial for advancing semiconductor device manufacturing.

Career Highlights

Joong S Jeong is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Jun-youn Kim and Eun-ju Bae, contributing to various projects that enhance the capabilities of semiconductor devices.

Conclusion

Joong S Jeong's innovative work in semiconductor technology, particularly in the formation of nanowires, showcases his expertise and commitment to advancing the field. His contributions are vital for the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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