Company Filing History:
Years Active: 2025
Title: Joo Yoon Kim: Innovator in Nonvolatile Memory Technology
Introduction
Joo Yoon Kim is a prominent inventor based in Gwangmyeong-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices. His innovative approach has led to the development of a unique method for reading nonvolatile resistive memory devices.
Latest Patents
Joo Yoon Kim holds 1 patent for his invention titled "Nonvolatile resistive memory device using dynamic reference in dual domain and read method thereof." This patent discloses a method that includes precharging a first bit line connected to a data cell and a second bit line connected to a reference cell. The method involves discharging a voltage precharged to both bit lines to a source node through the data and reference cells. It also includes sampling a reference voltage and a data voltage at specific times, sensing and amplifying the difference between these voltages, and outputting the result as data.
Career Highlights
Joo Yoon Kim is currently associated with the Osong Medical Innovation Foundation and the Korea University Research and Business Foundation. His work focuses on advancing technology in the medical field through innovative memory solutions.
Collaborations
One of his notable coworkers is Jongsun Park, with whom he collaborates on various projects related to memory technology.
Conclusion
Joo Yoon Kim's contributions to nonvolatile memory technology highlight his innovative spirit and dedication to advancing the field. His work continues to influence the development of efficient memory devices.