Company Filing History:
1 out of 2,426 
1 out of 5,111 
1 out of 1 Years Active: 2007
Title: Joo-Von Kim: Innovator in Magnetoresistive Memory Technology
Introduction
Joo-Von Kim is a notable inventor based in Massy, France, recognized for his contributions to the field of magnetoresistive memory technology. With a focus on enhancing memory elements, Kim has developed innovative solutions that push the boundaries of data storage capabilities.
Latest Patents
Kim holds a patent for a magnetoresistive memory element that features a trapped magnetic region and a free magnetic region separated by a barrier layer. This design includes a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, each associated with a layer magnetic moment vector. The resulting magnetic moment vector is engineered to have an amplitude smaller than at least 40% of the maximum amplitude of the layer magnetic moment vector. The unique aspect of this invention lies in the differing anisotropy fields and demagnetizing field tensors for the ferromagnetic layers, allowing for various methods of writing into the memory element and its initialization.
Career Highlights
Throughout his career, Joo-Von Kim has worked with prominent organizations such as STMicroelectronics and the Centre National de la Recherche Scientifique. His experience in these institutions has significantly contributed to his expertise in memory technologies and innovation.
Collaborations
Kim has collaborated with esteemed colleagues, including Thibaut Devolder and Claude Chappert, further enhancing the impact of his work in the field of magnetoresistive memory.
Conclusion
Joo-Von Kim's innovative contributions to magnetoresistive memory technology exemplify his commitment to advancing data storage solutions. His patent and collaborations reflect a significant impact on the industry, showcasing his role as a leading inventor in this specialized field.