Frisco, TX, United States of America

Joo-Sang Lee

USPTO Granted Patents = 15 

Average Co-Inventor Count = 1.7

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Boise, ID (US) (2021 - 2023)
  • Frisco, TX (US) (2021 - 2024)

Company Filing History:


Years Active: 2021-2025

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):

Title: Joo-Sang Lee: Innovator in Memory Technology

Introduction

Joo-Sang Lee is a prominent inventor based in Frisco, TX (US), known for his significant contributions to memory technology. With a total of 15 patents to his name, he has made remarkable advancements in the field of memory devices and systems.

Latest Patents

Among his latest patents is a memory device featuring per die temperature-compensated refresh control. This innovation includes a plurality of memory cells and a sensor that measures the temperature of the memory device. The device intelligently determines the frequency of refresh commands and can skip refresh operations based on temperature and command frequency. Another notable patent involves methods for adjusting the refresh rate during a self-refresh state. This system executes a first set of refresh operations at a specific rate and can modify the refresh rate based on performance metrics, enhancing efficiency in memory management.

Career Highlights

Joo-Sang Lee has worked with notable companies such as Micron Technology Incorporated and Lodestar Licensing Group LLC. His experience in these organizations has allowed him to refine his expertise in memory technology and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Joo-Sang has collaborated with talented individuals, including James S. Rehmeyer and Jason M. Johnson. These partnerships have fostered a creative environment that has led to the development of advanced memory solutions.

Conclusion

Joo-Sang Lee's work in memory technology exemplifies innovation and dedication. His patents and collaborations continue to influence the industry, paving the way for future advancements in memory systems.

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