Jongryeol Yoo

Title: Jongryeol Yoo and Semiconductor Device Innovation.

Introduction

Jongryeol Yoo is an inventor associated with Samsung Electronics Ltd. in Suwon-si, South Korea. His patent work includes a semiconductor device design featuring vertically stacked channels and a recessed active contact.

Latest Patents

The provided information identifies one patent associated with Yoo: “Semiconductor Device Having Vertically Stacked Channels Connected to a Multi-Layer Source/Drain Pattern with an Active Contact Recessed Therein.” The device includes a substrate, vertically stacked and spaced-apart semiconductor patterns, and a source/drain pattern connected to those patterns. An interlayer insulating pattern lies above the source/drain pattern, while an active contact passes through the insulating layer to connect electrically to the source/drain pattern. The bottommost surface of the active contact is positioned below the top surface of the lowermost semiconductor pattern. This arrangement describes a contact structure integrated with a vertically stacked channel architecture. Yoo is credited with 1 patent in the information provided.

Career Highlights

Yoo’s listed work connects his inventorship to semiconductor device engineering at Samsung Electronics Ltd. The patent focuses on the structural integration of stacked semiconductor channels, source/drain regions, and an active contact.

Collaborations

The available information associates Yoo with Samsung Electronics Ltd. and does not identify additional collaborators.

Conclusion

Jongryeol Yoo’s listed patent addresses a semiconductor device architecture that combines vertically stacked channels with a recessed active contact, reflecting his contribution to semiconductor innovation.